Home Articles List Article Information
JES. Journal of Engineering Sciences
Journal Archive
Volume Volume 53 (2025)
Volume Volume 52 (2024)
Volume Volume 51 (2023)
Volume Volume 50 (2022)
Volume Volume 49 (2021)
Volume Volume 48 (2020)
Volume Volume 47 (2019)
Volume Volume 46 (2018)
Volume Volume 45 (2017)
Volume Volume 44 (2016)
Volume Volume 43 (2015)
Volume Volume 42 (2014)
Volume Volume 41 (2013)
Volume Volume 40 (2012)
Volume Volume 39 (2011)
Volume Volume 38 (2010)
Volume Volume 37 (2009)
Volume Volume 36 (2008)
Volume Volume 35 (2007)
Volume Volume 34 (2006)
El-Amin, A., Hassan, M. (2008). STUDY OF MIS MULTICRYSRALINE SILICON THIN-FILM SOLAR CELL. JES. Journal of Engineering Sciences, 36(No 6), 1399-1411. doi: 10.21608/jesaun.2008.119779
A. A. El-Amin; M. K. Hassan. "STUDY OF MIS MULTICRYSRALINE SILICON THIN-FILM SOLAR CELL". JES. Journal of Engineering Sciences, 36, No 6, 2008, 1399-1411. doi: 10.21608/jesaun.2008.119779
El-Amin, A., Hassan, M. (2008). 'STUDY OF MIS MULTICRYSRALINE SILICON THIN-FILM SOLAR CELL', JES. Journal of Engineering Sciences, 36(No 6), pp. 1399-1411. doi: 10.21608/jesaun.2008.119779
El-Amin, A., Hassan, M. STUDY OF MIS MULTICRYSRALINE SILICON THIN-FILM SOLAR CELL. JES. Journal of Engineering Sciences, 2008; 36(No 6): 1399-1411. doi: 10.21608/jesaun.2008.119779

STUDY OF MIS MULTICRYSRALINE SILICON THIN-FILM SOLAR CELL

Article 25, Volume 36, No 6, November and December 2008, Page 1399-1411  XML PDF (231.78 K)
Document Type: Research Paper
DOI: 10.21608/jesaun.2008.119779
View on SCiNiTO View on SCiNiTO
Authors
A. A. El-Amin1; M. K. Hassan2
1Physics Department, faculty of Science, Aswan
2Engineering Materials & Mech. Design Department, High Institute of Energy, South Valley University, 81528 Aswan, Egypt
Abstract
State-of-the-art of multicrystalline Silicon (mc-Si) material with minority carrier diffusion lengths exceeding the wafer thickness is commercially available today. It is expected that the diffusion length to wafer thickness ratio will be increasing further due to improved material quality and due to the trend towards thinner wafers to reduce material costs. As a result, the open circuit voltage, Voc decreases with increasing temperature according the ratio Voc/T = 0.00337 mVK-1. The output power decrease with increasing temperature mainly because of a decrease in the photovoltaic and fill factor of the current voltage characteristic. This happens in samples which have P /T =  0.00048 WK-1 , FF / T = 0.002 %K-1, and R / T =  0.021  K-1. In order to fully exploit the material quality, a solar cell process that includes excellent rear surface passivity is needed. In this paper solar cell results from thin mc-Si solar cells with silicon nitride front and rear surface passivity are presented. Furthermore, the most important loss mechanisms with respect to thin mc-Si cells namely : (i) optical losses, (ii) losses due to rear surface recombination and (iii) losses due to the series resistance caused by local rear contact schemes with dielectric passivity are discussed. The light trapping effect of this structure is also confirmed reflection at the weakly absorbed wavelength.
Main Subjects
Mechanical, Power, Production, Design and Mechatronics Engineering.
Statistics
Article View: 140
PDF Download: 376